2 0 0v l ogic level n - chann e l mosf e t genera l description these n -channel enhancement mode power field effect transistors are produced using kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supply, motor control. featur es 9.0 a, 200v, r ds(on) = 0.28 ? @v gs = 10 v low gat e charge ( typical 16 nc) low crss ( typical 17 pf) fast switching 100% avalanche tested improved dv/dt capability low level gate drive requirement allowing direct opration from logic drivers absolu te maximum ratings t c = 25c unless otherwise noted ther mal characteristics symbol paramet er ksmd12n20ltm_f085 units v dss drain-source vo ltage 200 v i d drain current - cont inuous (t c = 25c) 9.0 a - cont inuous (t c = 100c) 5.7 a i dm drain current - p ulsed (note 1) 36 a v gss gate -source voltage 20 v i ar avalanche current (note 1) 9.0 a dv/dt peak diode recovery dv/dt (note 2) 5.5 v/ns p d power dissipation (t a = 25c) * 2.5 w power dissipation (t c = 25c) 55 w - de rate above 25c 0.44 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead t emperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal re sistance, junction-to-case -- 2.27 c / w r ja thermal re sistance, junction-to-ambient * -- 50 c / w r ja thermal re sistance, junction-to-ambient -- 110 c / w * when mo unted on the minimum pad size recommended (pcb mount) ? rohs c ompliant ? qualified to aec q101 ! " ! ! ! " " " ! " ! ! ! " " " to-252 to-251 2014-7-15 1 www.kersemi.com ksmd12n20ltm_f085
(note 3) (note 3, 4) (note 3, 4) (note 3) electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. i sd 11.6a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 3. pulse test : pulse width 300 s, duty cycle 2% 4. essentially independent of operating temperature symbol parameter test conditions min typ max units off ch aracteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 200 -- -- v ? bv dss / ? t j breakdown vol tage temperature coefficient i d = 250 a, referenced to 25c -- 0.14 -- v/c i dss zero ga te voltage drain current v ds = 200 v, v gs = 0 v -- -- 1 a v ds = 160 v, t c = 125c -- -- 1 0 a i gssf gate -body leakage current, forward v gs = 20 v, v ds = 0 v -- -- 100 na i gssr gate -body leakage current, reverse v gs = -20 v, v ds = 0 v -- -- -100 na on chara cteristics v gs(th ) gate threshold v oltage v ds = v gs , i d = 250 a 1.0 -- 2.0 v r ds(on) static drain-s ource on-resistance v gs = 10 v, i d = 4.5 a v gs = 5 v, i d = 4.5 a -- 0. 22 0.25 0.28 0.32 ? g fs forward transconductance v ds = 30 v, i d = 4.5 a -- 11.6 -- s dynamic ch aracteristics c iss inpu t capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 830 1080 pf c oss output c apacitance -- 120 155 pf c rss reverse tr ansfer capacitance -- 17 22 pf switchin g characteristics t d(on) turn-o n delay time v dd = 100 v, i d = 11.6 a, r g = 25 ? -- 15 40 ns t r turn-o n rise time -- 190 390 ns t d(off) turn -off delay time -- 60 130 ns t f turn -off fall time -- 120 250 ns q g total ga te charge v ds = 160 v, i d = 11.6 a, v gs = 5 v -- 16 21 nc q gs gate -source charge -- 2.8 -- nc q gd gate -drain charge -- 7.6 -- nc drain -source diode characteristics and maximum ratings i s maximum cont inuous drain-source diode forward current -- -- 9.0 a i sm maximum p ulsed drain-source diode forward current -- -- 36 a v sd drain-source diode fo rward voltage v gs = 0 v, i s = 9.0 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 11.6 a, di f / dt = 100 a/ s -- 128 -- ns q rr reverse recovery charge -- 0.56 -- c ksmd12n20ltm_f085 2014-7-15 2 www.kersemi.com
0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v no te : i d = 11.6 a v gs , g ate-source voltage [v] q g , to tal gate charge [nc] 10 -1 10 0 10 1 0 300 600 900 1200 1500 1800 c iss = c gs + c gd (c ds = shor ted) c oss = c ds + c gd c rss = c gd no tes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capac itance [pf] v ds , d rain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , r everse drain current [a] v sd , source-drain voltage [v] 0 6 12 18 24 30 36 0.0 0.3 0.6 0.9 1.2 1.5 v gs = 5 v v gs = 10v r ds (on) [ ? ], dr ain-source on-resistance i d , drain current [a] 02468 10 10 -1 10 0 10 1 150 25 -55 notes : 1. v ds = 30 v 2. 250 s pulse test i d , d rain current [a] v gs , g ate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 10 v 8.0 v 6.0 v 5.0 v 4.5 v 4.0 v 3.5 v bottom : 3.0 v not es : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figur e 5. capacitance characteristics figure 6. gate charge characteristics figure 3. on-resistance variation vs. drain current and gate voltage figure 4. body diode forward voltage variation vs. source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics fqd12n20ltm_f085 rev. a 3 www.fairchildsemi.com ksmd12n20ltm_f085 2014-7-15 3 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 0 n o te s : 1. z jc (t) = 2.27 /w m ax. 2. d u ty f actor, d =t 1 /t 2 3 . t jm - t c = p dm * z jc (t) si ngle pulse d=0 .5 0.0 2 0.2 0.0 5 0.1 0.0 1 z jc (t), therm al response t 1 , s q u are w ave p u lse d ura tion [sec] 25 50 75 100 125 150 0.0 1. 5 3.0 4.5 6.0 7.5 9.0 i d , dr ain current [a] t c , c ase temperature [ ] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s ope ration in this area is limited by r ds( on) not es : 1. t c = 25 o c 2 . t j = 1 5 0 o c 3 . single pulse i d , d rain current [a] v ds , d rain-source voltage [v] -10 0 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 n o tes : 1. v gs = 10 v 2 . i d = 5.8 a r ds( on) , ( normalized) drain-source on-resistance t j , j unction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 not es : 1. v gs = 0 v 2. i d = 250 a bv dss , (n ormalized) drain-source breakdown voltage t j , j unction temperature [ o c] typical characteristics (continued) fi gure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 7. breakdown voltage variation vs. temperature figure 8. on-resistance variation vs. temperature figure 11. transient thermal response curve t 1 p dm t 2 ksmd12n20ltm_f085 2014-7-15 4 www.kersemi.com
typical characteristics fqd12n20ltm_f085 rev. a 3 www.fairchildsemi.com figure 12. u n c l a m p e d i n d u c t i v e switching capability 0. 001 0.01 0.1 1 10 1 10 20 sta rting t j = 12 5 o c sta rting t j = 25 o c i as , av alanche current (a) t av , tim e in avalanche (ms) t av = (l)(i as )/( 1.3*rated bv dss - v dd ) if r = 0 if r 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] ksmd12n20ltm_f085 2014-7-15 5 www.kersemi.com
cha rge v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut cha rge v gs 5v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(o n) t r t on t off t d(o ff) t f v dd 5v v ds r l dut r g v gs v gs v ds 10% 90% t d(o n) t r t on t off t d(o ff) t f v dd 5v v ds r l dut r g v gs ga te charge test circuit & waveform resistive switching test circuit & waveforms ksmd12n20ltm_f085 2014-7-15 6 www.kersemi.com
peak d iode recovery dv/dt test circuit & waveforms dut v ds + _ driv er r g sam e type as dut v gs d v/dt controlled by r g i sd con trolled by pulse period v dd l i sd 10v v gs ( d river ) i sd ( dut ) v ds ( dut ) v dd bo dy diode forward voltage drop v sd i fm , b ody diode forward current body diode reverse current i rm bo dy diode recovery dv/dt di/ dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driv er r g sam e type as dut v gs d v/dt controlled by r g i sd con trolled by pulse period v dd l l i sd 10v v gs ( d river ) i sd ( dut ) v ds ( dut ) v dd bo dy diode forward voltage drop v sd i fm , b ody diode forward current body diode reverse current i rm bo dy diode recovery dv/dt di/ dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- ksmd12n20ltm_f085 2014-7-15 7 www.kersemi.com
pac kage dimensions 6.60 0.20 2.30 0.10 0.50 0.10 5.34 0.30 0.70 0.20 0.60 0.20 0.80 0.20 9.50 0.30 6.10 0.20 2.70 0.20 9.50 0.30 6.10 0.20 2.70 0.20 min0.55 0.76 0.10 0.50 0.10 1.02 0.20 2.30 0.20 6.60 0.20 0.76 0.10 (5.34) (1.50) (2xr0.25) (5.04) 0.89 0.10 (0.10) (3.05) (1.00) (0.90) (0.70) 0.91 0.10 2.30typ [2.30 0.20] 2.30typ [2.30 0.20] max0.96 (4.34) (0.50) (0.50) dpak ksmd12n20ltm_f085 2014-7-15 8 www.kersemi.com
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